The direct epitaxial growth of III-V semiconductor lasers on standard, CMOS-compatible, on-axis (001) Si substrates is actively sought for the realization of active photonic integrated circuits. Here we report on the first mid-infrared semiconductor laser epitaxially grown on on-axis Si substrates, i.e., compatible with industry standards. Furthermore, these GaSb-based laser diodes demonstrate low threshold current density, low optical losses, high temperature operation, and high characteristic temperatures. These results represent a breakthrough toward the integration of semiconductor laser sources on Si for smart sensors.

Mid-infrared laser diodes epitaxially grown on on-axis (001) silicon M. Rio Calvo, L. Monge Bartolomé, M. Bahriz, G. Boissier, L.t Cerutti, J.-B. Rodriguez, and E. Tournié Optica Vol. 7, Issue 4, pp. 263-266 (2020) ⇒ Consulter l'article sur le site de OPTICA ⇒ Consulter le PDF