Nanomir 2009

Groupe Nanomir - 2009

C–INV : Conférences données à l’invitation du comité d’organisation dans un congrès national ou international

E. Tournié, “Mid-IR Sb-based emitters and detectors”, WOCSDICE 2009, Malaga, Spain, 18 - 20 May 2009.

A. R. Adams, I. P. Marko, and S.J. Sweeney,R. Teissier, A. N. Baranov, and S. Tomi, “The effect of hydrostatic pressure on the operation of quantum cascade lasers”, Photonics West 2009, San Jose, USA, 19-24 January, 2009.

E. Tournié, “Nanostructure Devices for Optoelectronics”, E-nano2009, Escuela Franco-Venezolana de Nanotecnologia, 2 – 6 November 2009, Choroni (Vénézuela).

P. Christol, C. Cervera, R. Chaghi, G. Boissier, J.B. Rodriguez, A. Le Bris, J.F. Guillemoles, “Antimonide-based structures for photodiode and photovoltaic systems”, Workshop "Frontiers of nanoscale spintronics, photodetection and photovoltaic", Marseille, November 2009.

P. Christol, “Le Superréseaux InAs/GaSb comme nouvelle filière de la photodétection infrarouge”, Optique Lille 2009 : Journées Nationales d'Optique Guidée & Horizons de l'Optique, Lille, Juillet 2009.

A.N. Baranov, R. Teissier, O. Cathabard, J. Devenson, “Quantum Cascade Lasers Emitting Near 2.6 µm”, ITQW 2009 (Montreal, Canada, 5-11 September, 2009).

A. Laurain, A. Garnache, M. Myara, L. Cerutti, J.-P. Perez and P. Signoret, M. Triki, P. Cermak, and D. Romanini, I. Sagnes, and G. Beaudoin, “High Power Single Frequency Broadly Tunable Compact Extended-Cavity Semiconductor Laser for Gas Analysis”, 7th Belarusian-Russian Workshop SEMICONDUCTOR LASERS AND SYSTEMS 2009.

L. Cerutti, A. Ducanchez, G. Narcy, P. Grech, G. Boissier, A. Garnache, E. Tournié and F. Genty, “GaSb-based VCSELs emitting in the mid-infrared wavelength range (2-3 µm) grown by molecular beam epitaxy”, 15th Int. Conf. on Molecular-Beam Epitaxy (MBE-15), 3 – 8 August 2008, Vancouver (Canada), J. Cryst. Growth 311, 1912 (2009).

ACL : Articles dans revues internationales ou nationales avec comité de lecture répertoriées par l’AERES dans des bases de données internationales

A. Monakhov, V. V. Sherstnev, A. P. Astakhova, E. A. Grebenschikova, Yu. P. Yakovlev, G. Boissier, R. Teissier, and A. N. Baranov, “Experimental observation of whispering gallery modes in sector disk lasers”, Appl. Phys. Lett. 94, 051102, 2009.

P. Marko, A. R. Adams, And S. J. Sweeney, R. Teissier, A. N. Baranov, and S. Tomi, “Evidence of carrier leakage into the L-valley in InAs-based quantum cascade lasers under high hydrostatic pressure”, Phys. Stat. Sol. (b) 246, 512, 2009.

A. Mignot, G. Feugnet, S. Schwartz, I. Sagnes, A. Garnache, C. Fabre and J.-P. Pocholle, “Single-frequency External Cavity Semiconductor Ring Laser Gyroscope”, Optics Letters 34, pp.97-99, 2009.

J.B. Rodriguez, L. Cerutti, E. Tournié, “GaSb-based, 2.2 µm type-I laser fabricated on GaAs operating continuous wave at room temperature”, Appl. Phys. Lett. 94, 023506, 2009.

A. Gassenq, G. Boissier, P. Grech, G. Narcy, A.N. Baranov, E. Tournié, “InAs/GaSb/InSb short-period super-lattice diode lasers emitting near 3.3 µm at room temperature”, Electron. Lett. 45, 165, 2009.

J.B. Rodriguez, L. Cerutti, P. Grech, and E. Tournié, “Room-temperature operation of a 2.25 µm electrically-pumped laser fabricated on a silicon substrate”, Appl. Phys. Lett., 94, 061124, 2009.

A. Ducanchez, L. Cerutti, P. Grech, F. Genty, and E. Tournié, “Mid-infrared GaSb-based EP-VCSEL emitting at 2.63 µm”, Electron. Lett., 45, 265, 2009.

B. Cocquelin ,D. Holleville, G. Lucas-Leclin, I. Sagnes, A. Garnache, M. Myara, P. Georges, “Tunable single-frequency operation of a diode-pumped vertical external-cavity laser at the cesium D2 line”, Applied Physics B: Lasers and Optics,95, 315 (2009).

A. Laurain, M. Myara, A. Garnache, G. Beaudoin and I. Sagnes, “High power single-frequency continuously-tunable compact extended-cavity semiconductor laser”, Optics Express, vol. 34, p. 97 – 99, 2009.

A. Gassenq, T. Taliercio, L. Cerutti, A.N. Baranov, and E. Tournié, “Mid-IR lasing from highly tensile strained, type II, GaInAs/GaSb quantum wells.”, Electron. Lett. 45, 1320 (2009).

A.Ouvrard, L. Cerutti, and A.Garnache, “Continuous tunable range with asingle frequency Sb-based External cavity emitting in the MIR”, Electron. Lett., 45, 629(2009).

C. Cervera, J.B. Rodriguez, R. Chaghi, H. Aït-Kaci, P. Christol “Characterization of midwave infrared InAs/GaSb superlattice photodiode”, J. Appl. Phys. 106, 024501 (2009).

C. Cervera, J. B. Rodriguez, J. P. Perez, H. Aït-Kaci, R. Chaghi, L. Konczewicz, S. Contreras, and P. Christol, “Unambiguous determination of carrier concentration and mobility for InAs/GaSb superlattice photodiode optimization”, J. Appl. Phys. 106, 033709 (2009).

R Chaghi, C Cervera, H. Aït-Kaci, P Grech, JB Rodriguez, P Christol, “Wet etching and chemical polishing of InAs/GaSb superlattice photodiodes”, Semicond. Sci. Technol. 24 (2009).

S. Moumdji, A. Larrue, D. Belharet, P. Dubreuil, S.Bonnefont, O. Gauthier-Lafaye, Y. Rouillard and A. Vicet, “2.6 mm GaSb based photonic crystal coupled cavity lasers”, ELECTRONICS LETTERS 22nd October 2009 Vol. 45, No. 22.

M. Debbichi, S. Ridene, H. Bouchriha, A. Ben Fredj, M. Saïd, J.-L. Lazzari, Y. Cuminal, P. Christol, “Theoretical study of laser structures based on the dilute nitride InAsN for mid-infrared operation”, Semiconductor Sciences and Technology, 24, 085010-6 (2009).

P. Kluczynski, S. Lundqvist, S. Belahsene and Y. Rouillard, “Tunable-diode-laser spectroscopy of C2H2 using a 3.03 µm GaInAsSb/AlGaInAsSb distributed-feedback laser”, Optics Letters, 34, 3767 (2009).

M. Motyka, G. Sek, K. Ryczko, J. Misiewicz, S. Belahsene, G. Boissier and Y. Rouillard, “Optical transitions and band gap discontinuities of GaInAsSb/AlGaAsSb quantum wells emitting in the 3 µm range determined by modulation spectroscopy”, J. of Appl. Phys., 106, 066104 (2009).

O. Cathabard, R. Teissier, J. Devenson, A.N. Baranov, “InAs-based distributed feedback quantum cascade lasers”, Electron. Lett. 45, 1028 (2009).

V. V. Sherstnev, E. A. Grebenschikova, A. M. Monakhov, A. P. Astakhova, N. D. Il’inskaya, G. Boissier, R. Teissier, A. N. Baranov, and Yu. P. Yakovlev, “A semiconductor whispering gallery mode laser with ring cavity operating at room”, Techn. Phys. Lett. 35(8) 749, 2009.

A.N. Imenkov, V. V. Sherstnev, M.A. Sipovskaya, A. P. Astakhova, E. A. Grebenschikova, A. M. Monakhov, K.V. Kalinina, G. Boissier, R. Teissier, A. N. Baranov, and Yu. P. Yakovlev, “Frequency tuned semiconductor whispering gallery mode laser (λ = 2.35 μm) operating at room temperature”. Techn. Phys. Lett. 35(9) 857, 2009.

G. Baili, L. Morvan, M. Alouini, F. Bretenaker, I. Sagnes, and A. Garnache, “Experimental demonstration of a tunable dual-frequency semiconductor laser free of relaxation oscillations”, OPTICS LETTERS, 34(21), (2009), pp 3421-3423.

C-ACTI : Communications avec actes dans un congrès international

A. Gassenq, L. Cerutti, A.N. Baranov, and E. Tournié, “MBE growth of mid-IR diode lasers based on InAs/GaSb/InSb short-period superlattice active zones”, 15th International Conference on Molecular-Beam Epitaxy (MBE-15), 3–8 August 2008, Vancouver (Canada): oral, J. Cryst. Growth 311, 1905 (2009).

E. Luna, F. Ishikawa, B. Satpati, J.B. Rodriguez, E. Tournié and A. Trampert, “Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy”, 15th International Conference on Molecular-Beam Epitaxy (MBE-15), 3 – 8 August 2008, Vancouver (Canada): oral, J. Cryst. Growth 311, 1739 (2009).

C. Cervera, J. P. Perez, R Chaghi, J. B. Rodriguez, P. Christol, L. Konczewicz, S. Contreras, “Transport measurements on InAs/GaSb superlattice structures for mid-infrared photodiode”, J. Phys.: Conf. Ser. 193 012030 (2009).

L. Konczewicz, S. Contreras, H. Aït-Kaci, Y. Cuminal, J.B. Rodriguez and P. Christol, “Effect of pressure on electrical properties of short period InAs/GaSb superlattice.”, 13th International Conference on High Pressure Semiconductor Physics (HPSP 13), Fortaleza (Brazil), July 2008. Physica Status Solidi B 246, 643-647 (2009).

M. Bardoux, A. Bousseksou, G. Tessier, S. Bouchoule, D. Fournier, A. Salhi, Y. Rouillard and F. Genty, “Thermoreflectance imaging of laser diodes and VCSELs along and perpendicular to the emission direction”, Workshop on Optical Measurement Techniques for Structures and Systems, Leuven, Belgium, May 2007. Optics and Lasers in Engineering, 47, 473 (2009)

Thibaut Daoud, Guilhem Boissier, Jan Devenson, Alexei N. Baranov and Roland Teissier, “Experimental study of transport in InAs Quantum Hot Electron Transistor”, J. Phys.: Conf. Ser. 193 (2009) 012014.

B. Ortaç, M. Baumgartl, O. Schmidt, A. Hideur, I. Sagnes, A. Garnache, J. Limpert , and A. Tünnermann, “Energy scaling of femtosecond and picosecond fiber oscillators beyond the microjoule level”, Proc. IEEE CLEO Europe/IQEC 2009 (Munich, DE).

A. Laurain, M. Myara, A. Garnache, I. Sagnes, G.Beaudoin, “High power Single–Frequency continuously tunable compact extended–cavity semiconductor laser”, Proc. IEEE CLEO Europe/EQEC 2009 (Munich, DE). Paper CB12.6 THU.

A. Laurain, A. Garnache, M. Myara, L. Cerutti, J.-P. Perez, P. Signoret, M. Triki, P. Cermak, D. Romanini, I. Sagnes, G. Beaudoin, “Single-Frequency Broadly-Tunable Compact Extended-Cavity Disc Laser at High Power Level”, Proc EOS Topical Meeting on Lasers, 2009 paper 2185.

B. Satpati, V. Tasco, N. Deguffroy, A.N. Baranov, E. Tournié, and A. Trampert, “Structural properties and strain relaxation mechanisms of MBE grown InSb quantum dots on GaSb substrates”, 2nd Int. Conference on Physics at Surfaces and Interfaces (PSI2009), Puri, India, 23 - 27 February 2009 (oral).

E. Luna, B. Satpati, B.H. Hong, S.I. Rybchenko, J.B. Rodriguez, A.N. Baranov, E. Tournié and A.Trampert, “Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular-beam-epitaxy”, 15th European Workshop on Molecular-Beam Epitaxy (Euro-MBE 15), Zakopane Poland, 8 - 11 mars 2009 (oral).

JB Rodriguez , L.Cerutti, and E. Tournié, “Mid-IR GaSb-based lasers on highly mismatched GaAs and Si substrates”, Proc. in Workshop on Compound Semiconductor Devices and integrated Circuits (WOCSDICE 2009), may 2009, Malaga, (Spain): oral.

J.B. Rodriguez, L. Cerutti and E. Tournié, “Demonstration of laser operation at room-temperature of an Sb-based mid-infrared multi-quantum-well structure monolithically grown on a Silicon substrate”, Conference on Lasers and Electro-Optics (CLEO 2009), 31 May – 5 June 2009, Baltimore (U.S.A): Late news paper (oral).

L. Cerutti, JB. Rodriguez, P.Grech and E.Tournié, “Room Temperature, Continuous Wave Operation of an Sb-Based Laser Grown on GaAs Substrate”, Conference on Lasers and Electro-Optics (CLEO 2009), 31 May – 5 June 2009, Baltimore (U.S.A): oral.

A. Ducanchez, L. Cerutti, P. Grech, F. Genty, and E. Tournié, “GaSb-based mid-IR electrically-pumped VCSELs covering the wavelength range from 2.3 to 2.7 µm”, Conference on Lasers and Electro-Optics (CLEO Europe 2009), 14 – 19 June 2009, Munich (Germany): oral.

J.B. Rodriguez, L. Cerutti and E. Tournié, “Mid-IR Sb-based lasers grown on highly mismatched GaAs and Si substrates”, 36th Int. Symp. on Compound Semiconductors 2009, (ISCS2009), 30 August – 2 September 2009, Santa Barbara (USA): oral.

A. Gassenq, T. Taliercio, A.N. Baranov, E. Luna, A. Trampert, E. Tournié, “Investigations of tensile-strained Ga(In)As/GaSb nanostructures”, 36th Int. Symp. on Compound Semiconductors 2009, (ISCS2009), 30 August–2 Sept 2009, Santa Barbara (USA): poster.

E. Luna, Y. Rouillard, L. Cerutti, E. Tournié, A. Trampert, “Interface stability of metastable quaternary (Ga,In)(As,Sb) quantum wells”, 36th Int. Symp. on Compound Semiconductors 2009, (ISCS2009), 30 August – 2 Sept 2009, Santa Barbara (USA): oral.

L. Cerutti, J.B. Rodriguez, and E.Tournié, “GaSb based, 1.55 µm laser monolithically integrated on Silicon substrate operating at room temperature”, IEEE Indium Phosphide and Related Materials (IPRM) 2010, 31 may – 4 June 2010 , Kagawa (Japan): oral.

S. Moumdji, A. Larrue, D. Belharet, P. Dubreuil, S. Bonnefont, O. Gauthier-Lafaye, Y. Rouillard, A. Vicet, “Continuous-wave single-mode GaInAsSb/GaSb photonic crystal coupled cavity lasers emitting at 2.6 µm”, ESLW2009 – Austria European Semiconductor Laser Workshop, 25-26 September 2009, Vienna University ofTechnology, Austria.

A. Hamdi, F. Genty, N. Yacoubi,Y. Rouillard and. A. Vicet, “Application of mirage effect to methane detection at 2.3µm”, ICPPP15 - Leuven, Belgium from 19 to 23 July 2009.

A.Vicet, B. Cousin, Y. El Kaim, Y. Rouillard and B. Jaillard, “Developpement of a multi-species probe around 2.6 µm with a bi-directional antimonide-based laser diode”, TDLS 13-17 juillet 2009, Zermatt.

M. Jahjah, A. Hamdi, G. Boissier and A. Vicet, “First evaluation of quartz enhanced photoacoustic spectroscopy with a gasb based laser diode, emitting at 2.3µm". TDLS 13-17 juillet 2009, Zermatt.

A. Le Bris, J.F. Guillemoles, P. Christol, G. Boissier, F. Pellé, P. Aschehoug, S. Ivanova, “Characterization of materials for hot carrier solar cells application by continuous wave PL experiments”, 2009 MRS Fall Meeting, Boston, December 2009 (oral)

R. Chaghi, C. Cervera, J.B. Rodriguez, P. Christol, H. Aït-Kaci, D. Boukredimi, M. Mebarki, “Surface treatment of antimonide-based materials by electrochemical process”, 2nd International Workshop on Chemistry and Applications (CIC2), Batna, Algérie, November 2009 (oral).

V.K. Kononenko, V.A. Firago, D.V. Ushakov, Y. Cuminal and P. Christol, “Spectral characteristics of the photosensitive and light emitting short-period superlattices in the InAs-GaSb system”, Workshop "Frontiers of nanoscale spintronics and photovoltaic, Marseille, November 2009.

R. Chaghi, C. Cervera, H. Aït-Kaci, P. Grech, Y. Cuminal, J.B. Rodriguez and P. Christol, “New chemical etching procedures of antimonide-based materials for infrared detectors”, 2d International Meeting on Materials for Electronic Applications, Hammamet-Tunisie, May 2009 (oral).

A. Le Bris, J.J. Greffet, P. Christol, G. Boissier, S. Ivanova, P. Aschehoug, J.F. Guillemoles, “Hot carrier solar cells efficiency simulation with partial thermalization”, 24th EPVSEC, Hamburg, September 2009.

M. Debbichi, S. Ridene, A. Ben Fredj, M. Saïd, H. Bouchriha, J.-L. Lazzari,Y. Cuminal, P. Christol, “Optical gain calculation of dilute Nitride InAsN/GaSb laser diodes operating in the mid-infrared”, EMRS Int. Conference, Spring Meeting, Strasbourg, June 2009.

R. Teissier, O. Cathabard, J. Devenson, A.N. Baranov, “Continuous wave operation of InAs/AlSb quantum cascade lasers”, ITQW 2009 (Montreal, Canada, 5-11 Sept, 2009).

J-P. Perez, A. Laurain, L. Cerutti, I. Sagnes and A. Garnache, “Thermal management of Mid-IR Sb-based surface emitting lasers”, Proc Exmatec 10 (may 2010), Darmstadt, Germany.

C-ACTN : Communications avec actes dans un congrès national

S. Belahsene, G. Boissier, P. Grech et Y. Rouillard, “Diodes laser à puits quantiques émettant à 3,0-3,3 μm pour analyse des hydrocarbures”, JNRDM - 12ème édition, Journées Nationales du Réseau Doctoral de Microélectronique, Lyon, Mai 2009 (oral).

A. Laurain, M. Myara, L. Cerutti, I. Sagnes, G. Beaudoin, M. Triki, P. Cermak, D. Romanini et A. Garnache, “Laser SC compact de forte puissance, monofréquence et accordable émettant dans le moyen et proche infrarouge”, COLOQ 11, 2009 (poster).

ACLN : Articles dans des revues internationales ou nationales avec comité de lecture non repertoriées par l'AERES ou dans les bases de données internationales

A. Gassenq, L. Cerutti, A.N. Baranov, et E. Tournié, “Cycle de conception d’un laser à semi-conducteur pour la détection de gaz”, Revue de l’Energie Electrique n° 6/7, juin/juillet 2009, pp. 23 – 26.