C-INV : Conférences données à l’invitation du comité d’organisation dans un congré national ou international

F. Saigné “Dommages dus aux rayonnements sur les systèmes électroniques” Ecole de l’Institut National de Physique Nucléaire et de Physique des Particules (IN2P3) sur “Les matériaux soumis au vide et aux rayonnements ionisants” 29 septembre-3 octobre 2008, Roscoff.

L. Dusseau “Robusta, Un projet EXPRESSO du CNES” Journée Jeunes Chercheurs du CNES, CNES, Toulouse, 6-8 Octobre 2008.

ACL : Articles dans revues internationales ou nationales avec comité de lecture répertoriées par l’AERES dans des bases de données internationales

D. Truyen, J. Boch, B. Sagnes, N. Renaud, E. Leduc, M. Briet, C. Heng, S. Mouton, and F. Saigné, “Temperature Effect on the Heavy-Ion Induced Single-Event Transients Propagation on a CMOS Bulk 0.18 µm Inverters chain” IEEE Trans. On Nucl. Sci, 55 (4), pp.2001-2006, Part 1, Aug. 2008.

V. Correas, F. Saigné, B. Sagnes, J. Boch, G. Gasiot ,D. Giot, Ph. Roche, « Simulation Tool for the Prediction of Heavy Ion Cross Section for Innovative 130 nm SRAMs” IEEE Trans. On Nucl. Sci, 55 (4), pp.2036-2041, Part 1, Aug. 2008.

F. Ravotti, M. Glaser, M. Moll, F. Saigné, « BPW34 Commercial p-i-n Diodes for High-level 1-MeV Neutron Equivalent Fluence Monitoring », IEEE Trans. On Nucl. Sci, 55 (4), pp.2133-2140, Part 1, Aug. 2008.

F. Wrobel, J. Gasiot, F. Saigné, A.D. Touboul, “Effects of atmospheric neutrons and natural contamination on advanced microelectronic memories”Appl. Phys. Lett. 93, issue 6, 064105 (2008)

A.M.J.F. Carvalho, A.D. Touboul, M. Marinoni, J.F. Carlotti, C. Guasch, M. Ramonda, H. Lebius, F. Saigné and J. Bonnet, « SiO2-Si under swift heavy ion irradiation : A comparison between normal and grazing incidence features », Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 266 (12-13) : pp. 2981-2985, Jun 2008.

A.M.J.F. Carvalho, A.D. Touboul, M. Marinoni, C. Guasch, M. Ramonda, H. Lebius, F. Saigné and J. Bonnet, “Single swift heavy ion-induced trail of discontinuous nanostructures on SiO2 surface under grazing incidence” Thin Solid Films, 517 (1), pp. 289-292, 3 Nov 2008

L. Dusseau, M. Bernard , Y. Gonzalez Velo, N. Roche, E. Lorfèvre, J. Boch, F. Saigné, « Review and analysis of the radiation induced degradation observed on the input bias current of linear integrated circuits » IEEE Trans. On Nucl. Sci, 55 (6), pp.3174-3181, Part 1, Dec. 2008.

F. Wrobel, J. Gasiot, F. Saigné,« Hafnium and Uranium Contributions to Soft Error Rate» IEEE Trans. On Nucl. Sci, 55 (6), pp.3141-3145, Part 1, Dec. 2008

M. Marinoni, A. D. Touboul, D. Zander, C. Petit, A. M. J. F. Carvalho, R. Arinero, M. Ramonda, F. Saigné, C. Weulersse, N. Buard, T. Carrière, and E. Lorfèvre, « High-Energy Heavy Ion Irradiation-Induced Structural Modifications: A Potential Physical Understanding of Latent Defects » IEEE Trans. On Nucl. Sci, 55 (6), pp.2970-2974, Part 1, Dec. 2008

S. Rocheman, F. Wrobel, J.R. Vaillé, F. Saigné, C. Weulersse, N. Buard, « Neutron induced energy deposition in a silicon diode.» IEEE Trans. On Nucl. Sci, 55 (6), pp.3146-3150, Part 1, Dec. 2008

S. Rocheman, Frédéric Wrobel, J.R. Vaillé, F. Saigné, C. Weulersse, N. Buard, F. Miller, T. Carrière, “Measurement and calculation of charge deposition in a silicon diode irradiated by 30 MeV protons”,J. Appl. Phys. 104 094508 (2008)

D. Benoit, F. Ravotti, P. Garcia, H. Prevost, D. Lapraz, J-R. Vaillé, and L. Dusseau, “Characterization of an Optically Stimulated Luminescence (OSL) material for thermal neutron detection: SrS:Ce,Sm,B,” Phys. Stat. sol. (a), vol. 205, n°5, pp. 1196-1202 (2008).

Brichard, B.; Agnello, S.; Nuccio, L.; Dusseau, L. “Comparison Between Point Defect Generation by gamma-rays in Bulk and Fibre Samples of High Purity Amorphous SiO2” IEEE Trans. Nucl. Sci. Volume 55, Issue 4 Part 1, Aug. 2008 Page(s):2121 – 2125

Benoit, D.; Garcia, P.; Matias-Vaille, S.; Ravotti, F.; Vaille, J.-R.; Glaser, M.; Brichard, B.; Fernandez, A.F.; Chatry, C.; Dusseau, L. “Real-Time Fibered Optically Stimulated Luminescence Dosimeter Based on SrS:Ce,Sm Phosphor” IEEE Trans. Nucl. Sci., Vol 55, Issue 4 Part 1, Page(s):2154 – 2160, Aug. 2008

Buchner, S.; McMorrow, D.; Bernard, M.; Roche, N.; Dusseau, L.; "Total Dose Effects on Error Rates in Linear Bipolar Systems”, IEEE Trans. Nucl. Sci. Vol. 55, Issue 4, Part 1, Page(s):2055 – 2062, Aug. 2008

A.Fernandez Fernandez, B. Brichard, F. Ravott, M. Glaser and L. Dusseau “Real-time fibre optic radiation dosimeters for nuclear environment monitoring around thermonuclear reactors” Fusion Engineering and Design, Volume 83, Issue 1, Pages 50-59 2006. January 2008

D. Benoit, J-R. Vaillé, J. Lautissier, S. Matias-Vaillé, J. Isturiz, P. Garcia, B. Brichard, and L. Dusseau, “Feasibility of fibered monitoring system for pulsed dose-rate facilities based on radioluminescence of SrS:Ce,Sm phosphor” IEEE Trans. Nucl. Sci., Vol 55, Issue 6 pp. 3421-3427 Dec 2008.

M. Bernard, T. Bouchet L. Dusseau, “ Origin of High Total Dose Sensitivity on the OP400 Bipolar Operational Amplifier” IEEE Trans. Nucl. Sci., Vol 55, Issue 6 pp. 3224-3230 Dec 2008.

Stephen Buchner, Dale McMorrow, Nicolas Roche, Laurent Dusseau, “The Effects of Low Dose-Rate Ionizing Radiation on the Shapes of Transients in the LM124 Operational Amplifier” IEEE Trans. Nucl. Sci., Vol 55, Issue 6 pp. 3314-3320 Dec 2008.

C-ACTI : Communications avec actes dans un congrès international

D. Benoit, J.-R. Vaillé, P. Garcia, L. Dusseau J. Lautissier, J. Isturiz, B. Brichard “Fibered Monitoring Device for Pulsed Dose-Rate Facilities Based on Radioluminescence of SrS:Ce, Sm Phosphor” IEEE-NSREC 2008, 14-18 Juillet 2008, Tucson, AZ, USA.

F. Wrobel, J. Gasiot, F. Saigné, « Hafnium and Uranium Contributions to Soft Error Rate» 45th IEEE Nuclear Space and Radiation Effects Conference, Tucson, Etats-Unis, 14-18 Juillet 2008.

M. Marinoni, A. D. Touboul, D. Zander, C. Petit, A. M. J. F. Carvalho, R. Arinero, M. Ramonda, F. Saigné, C. Weulersse, N. Buard, T. Carrière, and E. Lorfèvre, « Study of Latent Defects Induced by Swift Heavy Ion Irradiation on MOS Devices Gate Oxide» 45th IEEE Nuclear Space and Radiation Effects Conference, Tucson, Etats-Unis, 14-18 Juillet 2008.

L.Dusseau, “Robusta, a student satellite to study radiation effects”. 1st ESA Workshop on picosatellites and Vega Maiden Flight CubeSat Workshop, 22 – 24 January 2008 ESTEC, Noordwijk Holland.

M. Bernard, T. Bouchet, L. Dusseau “ Origin of High Total Dose Sensitivity on the OP400 Bipolar Operational Amplifier” IEEE-NSREC 2008, 14-18 Juillet 2008, Tucson, AZ, USA.

Stephen Buchner, Dale McMorrow, Nicolas Roche, Laurent Dusseau, “The Effects of Low Dose-Rate Ionizing Radiation on the Shapes of Transients in the LM124 Operational Amplifier” IEEE-NSREC 2008, 14-18 Juillet 2008, Tucson, AZ, USA.

L. Dusseau, M. Bernard , Y. Gonzalez Velo, N. Roche, E. Lorfèvre, J. Boch, F. Saigné, « Review and analysis of the radiation induced degradation observed on the input bias current of linear integrated circuits », 45th IEEE Nuclear Space and Radiation Effects Conference, Tucson, Etats-Unis, 14-18 Juillet 2008.

S. Rocheman, F. Wrobel, J.R. Vaillé, F. Saigné, C. Weulersse, N. Buard, « 30 MeV and 63 MeV neutron induced energy deposition in a silicon diode: Experimental validation of Monte Carlo simulation.» 45th IEEE Nuclear Space and Radiation Effects Conference, Tucson, Etats-Unis, 14-18 Juillet 2008.

A.M.J.F. Carvalho, A.D. Touboul, , M. Marinoni, R. Arinero, F. Saigné, J. Bonnet, “Heavy ion-induced latent defects dependence on oxide thickness: The reason why Post Gate Stress are especially dedicated to Power MOSFETs”, 7th Symposium SIO2 Advanced Dielectrics an Related Devices, Saint Etienne, France, 30juin-2 juillet 2008.

M. Marinoni, A.D. Touboul, D. Zander, C. Petit, A.M.J.F. Carvalho, F. Wrobel, F. Saigné, C. Weulersse, F. Miller, T. Carrière, and E. Lorfèvre, “Study of the Contribution of Latent Defects Induced by Swift Heavy Ion Irradiation on the Gate Oxide Breakdown”, Proceedings of the 7th European Workshop on Radiation and its Effects on Components and Systems, Jyvaskyla, Finlande, 10-12 Septembre 2008.

V. Correas, F. Saigné, B. Sagnes, F. Wrobel, J. Boch, G. Gasiot, P. Roche, “Prediction of Multiple Cell Upset induced by heavy ions in a 90nm bulk SRAM”, Proceedings of the 7th European Workshop on Radiation and its Effects on Components and Systems, Jyvaskyla, Finlande, 10-12 Septembre 2008.

N. Roche, Y. Gonzalez Velo, L. Dusseau, J. Boch, J-R. Vaille, F. Saigné, B. Azais, G. Auriel, E. Lorfevre, V. Pouget, S. P. Buchner, J-P. David, P. Calvel, R. Marec “Accelerated Irradiation Method to Study Synergy Effects in Bipolar Integrated Circuits”, Proceedings of the 7th European Workshop on Radiation and its Effects on Components and Systems, Jyvaskyla, Finlande, 10-12 Septembre 2008.

D. Benoit, J-R. Vaillé, J. Isturiz, P. Garcia, J. Lautissier and L. Dusseau, “Dosimetric characterization of near real-time fibered optically stimulated luminescence dosimeter based on SrS:Ce,Sm phosphor with therapeutics photons and electrons beams,” 8th European Workshop on Radiation Effects on Components and Systems (RADECS), September 10-12,Jyväskylä, Finland, 2008.

C. Weulersse, A. Bougerol, G. Hubert, F. Wrobel, T. Carriere, R. Gaillard, N. Buard “Investigation of the influence of process and design on soft error rate in integrated CMOS technologies thanks to Monte Carlo simulation” Reliability Physics Symposium, 2008. IRPS 2008. IEEE International, April 27 2008-May 1 2008 Page(s):729 – 730, doi 10.1109/RELPHY.2008.4559010.

C-OUV : Contributions à des Ouvrages collectifs

“Structural defects in SiO-Si caused by ion bombardment”Chapitre 18 de “Defects in Microelectronic Materials and Devices”A. D. Touboul, M. Marinoni, A.M.J.F. Carvalho, F. Saigné, J. Bonnet and J. Gasiot Edited by Taylor and Francis/CRC Press 19 novembre 2008.ISBN: 9781420043761ISBN 10: 1420043765