Electrical characterization of microelectronic components: Low frequency noise

Permanent staff : Fabien Pascal (Pr), Bruno Sagnes (MCF HDR), Alain Hoffmann (Pr), Matteo Valenza (Pr)

PhD students : Marcelino Seif (2012-2015), Johnny El Beyrouthy (2017-2020)

Post Doctorate : Marcelino Seif (2017-2018), Alexandre Vauthelin (2019)

Financial support :  RF2THZ-SiSOC European Project (CATRENE - DGE) (2012-2016), TARANTO European project ( H2020 ECSEL JU - DGE) (2017-2020)

Actual principal partners : STMicroelectronics, Infineon, IEMN Lille, Modena University

Electrical characterization of microelectronic components has for many years been a specialty of our laboratory research, particularly that of low frequency noise. After participating in the European RF2THZ-SiSOC project in a consortium which has been selected by the CATRENE organization, the team is now involved in the European project TARANTO funded by an ECSEL JU H2020 program and the Ministry of Economy, Finance and Industry. In this project, our team is in charge of the low frequency noise characterization and modeling in heterojunction Si/SiGe:C bipolar transistors (HBT) developed on BiCMOS 55 nm technology by STMicrolectronics. HBTs developed on BiCMOS 130 nm technology were studied in the previous project. The main objectives are the low frequency noise compact modeling including reliability studies under electrical stress and irradiation (X and gamma rays). We are also able to perform temperature characterizations from 100 K to 400 K.

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The main results that we can highlight are the following:

- Complete characterization of the input noise (SIB), in high impedance measurement, with the classic 1/f noise SPICE modeling leading to extremely low KB values: best published result equals to 7 10-11 µm² obtained on BiCMOS 130 nm HBTs [1]. The same modeling was carried out under a statistical aspect taking into account the 1/f noise dispersion on a full wafer [2], the presence of generation-recombination (GR) components and RTS noise.


- The complete study of the output noise (SIC), in low impedance measurement, with an associated SPICE model [3].


- Confirmation that the input 1/f noise is the image of the spontaneous base current fluctuations and, more innovative, that the output 1/f noise is only related to the collector current fluctuations.

- Input BF noise measurements at very low temperatures up to 100 K, which allowed us, from GR components analysis, to extract two activation energies of traps: 116 and 185 meV [4].



- The best X and gamma-ray robustness of the BiCMOS 55 nm HBTs compared to the BiCMOS 130 nm ones [5].